Clean-room Process

ADRC Technology Introduction for ADRC process

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  A total of 51 processes are registered.
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a-Si:H deposition
PECVD System
(Plasma-enhanced chemical vapor deposition)

Model. No : AMAT P-5000 (PRECISION 5000)
Company : APPLIED MATERIALS

Substrate size : < 15cm X 15cm
Deposition thickness : Max 200 nm/Time
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SiNx, SiO₂ deposition
PECVD System
(Plasma-enhanced chemical vapor deposition)

Model. No : AMAT P-5000 (PRECISION 5000)
Company : APPLIED MATERIALS

Substrate size : < 15cm X 15cm
Deposition thickness : Max 200 nm/Time
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PIN deposition
PECVD System
(Plasma-enhanced chemical vapor deposition)

Model. No : AMAT P-5000 (PRECISION 5000)
Company : APPLIED MATERIALS

Substrate size : < 15cm X 15cm
Deposition thickness : Max 700 nm/Time
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Cu, Ti, Mo, Al, IZO, ITO deposition
DC sputtering system

Model. No : AMAT P-5000 (PRECISION 5000)
Company : APPLIED MATERIALS

Substrate size : < 15cm X 15cm
Deposition thickness : Max. 200 nm/Time
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Au deposition
[Au sputter]
Company : SAM WON Vacuum
Substrate size : < 15cm X 15cm
Target : 6-inch
Vacuum gauge : 10-5 Torr
Thickness : Max. 100 nm/time
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Ion Shower Doping System
p- or n-doping for amorphous and crystal silicon
 
P-doping (B2H6), N-doping (PH3)
 
Model. No. : AMAT P-5000 (PRECISION 5000)
Company : APPLIED MATERIALS
 
Substrate size : < 15cm X 15cm
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Photo-lithography
Size
1. Mask : 8-inch
2. Substrate : < 15cm X 15cm)
3. Procedure : PR coating → Photo-lithography → Develop → Etch → Strip
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Dry Etch System
Reactive Ion Etching (RIE)

Model. No : AMAT P-5000 (PRECISION 5000)
Company : APPLIED MATERIALS

Substrate size : < 15cm X 15cm
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Wet Etch System
Wet station
 
Metal : Cu, Ti, Mo, Al, IZO, ITO
Insulator : SiO2, SiNx
Semiconductor : a-Si:H, LTPS, IGZO
 
Substrate size : < 15cm X 15cm
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Baking System
Soft and Hard bakes for Photo-resist or solution process

Oven type

Company : Clean Oven
Model. No. : OF-11s

Soft baker : 110℃
Hard baker : 130℃
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